The invention relates to a method of synthesis of pure materials by laser ablation which may be used for depositing thin films and for synthesis of nanometric materials. According to the invention, the method uses some non-parallel ablation targets (2), rotated by electric motors (1), where the targets (2) are hit by collimated laser beams (3), so that they exceed the ablation threshold, the generated ablation plasmas expand in directions perpendicular on the targets they come from, they collide and confine on the direction given by the impulse summation, and a gas jet (6) interacts with the resulting plasma and changes its direction (7). After the laser ablation there result particles and fragments (4) of a high mass in comparison with the ions, atoms and electrons in the plasma, so that these particles and fragments (4) keep their moving direction, while the plasma precursors, having the direction modified by the gas jet (6), get on a sublayer (5) for film synthesis or for collection.